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Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam qualityDITTMAR, F; SUMPF, B; ERBERT, G et al.Semiconductor science and technology. 2007, Vol 22, Num 4, pp 374-379, issn 0268-1242, 6 p.Article

Determination of GaN HEMT reliability by monitoring IDSSPAZIRANDEH, R; WÜRFL, J; TRÄNKLE, G et al.Microelectronics and reliability. 2010, Vol 50, Num 6, pp 763-766, issn 0026-2714, 4 p.Conference Paper

Selective lateral dry etching of GaAs in AlGaAs/GaAs heterostructures with CCl2F2/HeWALTHER, M; TRÄNKLE, G; RÖHR, T et al.Journal of applied physics. 1992, Vol 72, Num 5, pp 2069-2071, issn 0021-8979Article

Subband energies in accumulation layers on InPABSTREITER, G; HUBER, R; TRANKLE, G et al.Solid state communications. 1983, Vol 47, Num 8, pp 651-654, issn 0038-1098Article

Efficiency-optimized monolithic frequency stabilization of high-power diode lasersCRUMP, P; SCHULTZ, C. M; WENZEL, H et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 1, issn 0022-3727, 013001.1-013001.20Article

High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factorsWANG, X; ERBERT, G; WENZEL, H et al.Semiconductor science and technology. 2012, Vol 27, Num 1, issn 0268-1242, 015010.1-015010.10Article

670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output powerSUMPF, B; ADAMIEC, P; ZORN, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7953, issn 0277-786X, isbn 978-0-8194-8490-1, 79530Z.1-79530Z.8Conference Paper

55 W peak power from 1100 nm wavelength 60 μm broad-area laser diodes enabled by reduced carrier accumulation in the waveguidePIETRZAK, A; CRUMP, P; WENZEL, H et al.Semiconductor science and technology. 2009, Vol 24, Num 3, issn 0268-1242, 035020.1-035020.5Article

High power DFB lasers for D1 and D2 rubidium absorption spectroscopy and atomic clocksKLEHR, A; WENZEL, H; BROX, O et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7230, issn 0277-786X, isbn 978-0-8194-7476-6 0-8194-7476-2, 1Vol, 72301I.1-72301I.0Conference Paper

650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mWSUMPF, B; ADAMIEC, P; ZORN, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68760M.1-68760M.8, issn 0277-786X, isbn 978-0-8194-7051-5, 1VolConference Paper

Effect of the AIN nucleation layer growth on A1N material qualityREENTILÄ, O; BRUNNER, F; KNAUER, A et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4932-4934, issn 0022-0248, 3 p.Conference Paper

N-type doping of HVPE-grown GaN using dichlorosilaneRICHTER, E; HENNIG, Ch; ZEIMER, U et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1658-1662, issn 1862-6300, 5 p.Conference Paper

Photogalvanic effect in asymmetric quantum wells and superlatticesSCHNEIDER, H; EHRET, S; SCHÖNBEIN, C et al.Superlattices and microstructures. 1998, Vol 23, Num 6, pp 1289-1295, issn 0749-6036Article

MBE growth of double-sided doped InAlAs/InGaAs HEMTs with an InAs layer inserted in the channelSEXL, M; BÖHM, G; XU, D et al.Journal of crystal growth. 1997, Vol 175-76, pp 915-918, issn 0022-0248, 2Conference Paper

Optimized strained InxGa1-xAs structures for device applicationKLEIN, W; BÖHM, G; TRÄNKLE, G et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 36-40, issn 0022-0248Conference Paper

Verification of direct-indirect cross-over in GaSb/AlSb MQW's by time resolved spectroscopyCEBULLA, U; FORCHEL, A; TRÄNKLE, G et al.Physica scripta (Print). 1987, Vol 35, Num 4, pp 517-519, issn 0031-8949Article

11 W broad area 976 nm DFB lasers with 58% power conversion efficiencySCHULTZ, C. M; CRUMP, P; WENZEL, H et al.Electronics letters. 2010, Vol 46, Num 8, pp 580-581, issn 0013-5194, 2 p.Article

23W peak power picosecond pulses from a single-stage all-semiconductor master oscillator power amplifierRIECKE, S; SCHWERTFEGER, S; LAURITSEN, K et al.Applied physics. B, Lasers and optics (Print). 2010, Vol 98, Num 2-3, pp 295-299, issn 0946-2171, 5 p.Article

Multiple vertical mode high power 975 nm diode lasers restricted to single vertical mode operation through use of optical facet coatingsCRUMP, P; WENZEL, H; RESSEL, P et al.Electronics letters. 2009, Vol 45, Num 1, pp 51-53, issn 0013-5194, 3 p.Article

Compact Watt-class visible light sources using direct frequency-doubled edge-emitting diode lasersPASCHKE, K; BLUME, G; FIEBIG, C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7193, issn 0277-786X, isbn 978-0-8194-7439-1 0-8194-7439-8, 1Vol, 71931C.1-71931C.7Conference Paper

Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodesHOFFMANN, V; KNAUER, A; JURSENAS, S et al.Journal of crystal growth. 2008, Vol 310, Num 21, pp 4525-4530, issn 0022-0248, 6 p.Article

1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nmSUMPF, B; ZOM, M; FRICKE, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68760T.1-68760T.6, issn 0277-786X, isbn 978-0-8194-7051-5, 1VolConference Paper

Freestanding 2-in GaN layers using lateral overgrowth with HVPEHENNIG, Ch; RICHTER, E; WEYERS, M et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 911-915, issn 0022-0248, 5 p.Conference Paper

GaN substrates by HVPEWEYERS, Markus; RICHTER, Eberhard; HENNIG, Ch et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69100I.1-69100I.10, issn 0277-786X, isbn 978-0-8194-7085-0, 1VolConference Paper

Detection of terahertz radiation with diode lasersBRENNER, C; HOFFMANN, S; HOFMANN, M. R et al.Electronics Letters. 2007, Vol 43, Num 16, pp 870-872, issn 0013-5194, 3 p.Article

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